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2SJ448 датащи(PDF) 7 Page - Renesas Technology Corp

номер детали 2SJ448
подробное описание детали  MOS FIELD EFFECT TRANSISTOR
PDF  10 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ448 датащи(HTML) 7 Page - Renesas Technology Corp

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Data Sheet D10029EJ2V0DS
5
2SJ448
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
ID - Drain Current - A
1.0
–0.1
0
–50
1.0
2.0
3.0
0
50
100
150
ID = –2.0 A
0.1
0
1
10
100
0.5
Pulsed
1.0
–1.0
10
100
1000
–10
–100
–1000
VGS = 0 V
f = 1 MHz
10
100
1000
–1.0
–10
–100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
ID - Drain Current - A
di/dt = 50 A/ s
VGS = 0 V
µ
10
0.1
100
1000
10000
1.0
10
100
1.0
1.5
4.0
VDD = –125 V
VGS = –10 V
RG = 10
Ω
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
0
4
8
12
16
–100
–200
ID = –4.0 A
–4
–8
–12
–16
VGS = –10 V
Ciss
tr
tf
VGS = 0 V
−10 V
0
Crss
Coss
td(on)
td(off)
VDD= –200 V
–125 V
–50 V



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