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2SJ448 датащи(PDF) 6 Page - Renesas Technology Corp

номер детали 2SJ448
подробное описание детали  MOS FIELD EFFECT TRANSISTOR
PDF  10 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ448 датащи(HTML) 6 Page - Renesas Technology Corp

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Data Sheet D10029EJ2V0DS
4
2SJ448
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
0
–5
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
ID - Drain Current - A
2.0
–0.1
VDS = –10 V
Pulsed
–1.0
1.0
10
100
–10
–100
1.0
3.0
–10
–15
Pulsed
4.0
–1.0
–10
Pulsed
0
6.0
–2.0
VDS = –10 V
ID = –1 mA
–4.0
–6.0
–8.0
–50
0
50
100
150
0
0.1
2.0
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
10
0.001
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
10
100
Single Pulse
Rth(ch-C) = 4.17˚C/W
–0.1
VGS = –10 V
µµ
Rth(ch-A) = 62.5˚C/W
TA = –25˚C
25˚C
75˚C
125˚C
ID = –4.0 A
–2.0 A
–0.8 A



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