©

1995

MOS FIELD EFFECT TRANSISTOR

2SJ448

SWITCHING

P-CHANNEL POWER MOS FET

DATA SHEET

Document No.

D10029EJ2V0DS00 (2nd edition)

Date Published

July 2001 NS CP(K)

Printed in Japan

The mark 5 shows major revised points.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

DESCRIPTION

The 2SJ448 is P-channel MOS Field Effect Transistor designed

for high voltage switching applications.

FEATURES

• 250 V rating high withstand voltage

• Low on-state resistance:

RDS(on) = 2.0

Ω MAX. (VGS = –10 V, ID = –2.0 A)

• Low input capacitance:

Ciss = 470 pF TYP.

• Narrow gate cut-off voltage width:

VGS(off) =

−5.5 to −4.0 V

• Built-in gate protection diode

• Full-mold package for easy mounting

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

–250

V

Gate to Source Voltage (VDS = 0 V)

VGSS

m 30

V

Drain Current (DC) (TC = 25°C)

ID(DC)

m 4.0

A

Drain Current (pulse)

Note1

ID(pulse)

m 16

A

Total Power Dissipation (TC = 25°C)

PT1

30

W

Total Power Dissipation (TA = 25°C)

PT2

2.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Single Avalanche Current

Note2

IAS

–4.0

A

Single Avalanche Energy

Note2

EAS

80

mJ

Notes 1. PW

≤ 10

µs, Duty cycle ≤ 1%

2. Starting Tch = 25°C, VDD = –125 V, RG = 25

Ω, VGS = –20 ¡ 0 V

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SJ448

Isolated TO-220

5

(Isolated TO-220)

5