2SJ448 datasheet(4/10 Pages) RENESAS

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Data Sheet D10029EJ2V0DS

2SJ448

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Zero Gate Voltage Drain Current

IDSS

VDS = –250 V, VGS = 0 V

–100

µA

Gate Leakage Current

IGSS

VGS =

m 25 V, VDS = 0 V

m 10

µA

Gate Cut-off Voltage

VGS(off)

VDS = –10 V, ID = –1 mA

–4.0

–4.8

–5.5

Forward Transfer Admittance

| yfs |VDS = –10 V, ID = –2.0 A1.0

2.3

Drain to Source On-state Resistance

RDS(on)

VGS = –10 V, ID = –2.0 A1.5

2.0

Ω

Input Capacitance

Ciss

VDS = –10 V

470

Output Capacitance

Coss

VGS = 0 V

200

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = –125 V, ID = –2.0 A

Rise Time

VGS = –10 V7

Turn-off Delay Time

td(off)

RG = 10

Ω

Fall Time

Total Gate Charge

VDD= –200 V15

Gate to Source Charge

QGS

VGS = –10 V4

Gate to Drain Charge

QGD

ID = –4.0 A9

Body Diode Forward Voltage

VF(S-D)

IF = 4.0 A, VGS = 0 V1.0

Reverse Recovery Time

trr

IF = 4.0 A, VGS = 0 V

195

Reverse Recovery Charge

Qrr

di/dt = 50 A /

µs

760

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

RG = 25

Ω

VDD

VGS = –20

→ 0 V

BVDSS

IAS

VDS

Starting Tch

RG = 10

Ω

D.U.T.

PG.

VDD

VGS

ID(

−)

10%

90%

10%

90%

VGS

td (off)

td (on)

ton

toff

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

VDD

Ω

IG = –2 mA

PG.

VDD

VGS(

−)

D.U.T.

VGS

Wave

Form

Wave

Form

τ = 1 µs

Duty Cycle

≤ 1%

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