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M58LR128FT датащи(PDF) 35 Page - STMicroelectronics |
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M58LR128FT датащи(HTML) 35 Page - STMicroelectronics |
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35 / 82 page ![]() 35/82 M58LR128FT, M58LR128FB PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES The Program and Erase times and the number of Program/ Erase cycles per block are shown in Ta- ble 15. In the M58LR128FT/B the maximum num- ber of Program/ Erase cycles depends on the voltage supply used. Table 15. Program, Erase Times and Endurance Cycles Note: 1. TA = –40 to 85°C; VDD = 1.7V to 2.0V; VDDQ = 1.7V to 2.0V. 2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution). 3. Excludes the time needed to execute the command sequence. 4. Average on entire device. Parameter Condition Min Typ Typical after 100k W/E Cycles Max Unit Erase Parameter Block (16 KWords) Preprogrammed 0.65 1 2.5 s Not Preprogrammed 0.8 2.5 s Main Block (64 KWords) Preprogrammed 1.4 3 4 s Not Preprogrammed 1.8 4 s Program(3) Single Cell Word Program 10 100 µs Buffer Program 10 µs Single Word Word Program 10 100 µs Buffer Program 10 µs Buffer (32 Words) (Buffer Program) 320 µs Main Block (64 KWords) 640 ms Suspend Latency Program 5 10 µs Erase 5 25 µs Program/Erase Cycles (per Block) Main Blocks 100,000 cycles Parameter Blocks 100,000 cycles Erase Parameter Block (16 KWords) 0.7 2.5 s Main Block (64 KWords) 1.2 4 s Program(3) Single Cell Word Program 10 100 µs Single Word Word Program 10 100 µs Buffered Enhanced Factory Program(4) 3.5 µs Buffer (32 Words) Word Program 320 µs Buffered Enhanced Factory Program(4) 100 µs Main Block (64 KWords) Word Program 640 ms Buffered Enhanced Factory Program(4) 200 ms Bank (8 Mbits) Word Program 5 s Buffered Enhanced Factory Program(4) 1.6 s Program/Erase Cycles (per Block) Main Blocks 1000 cycles Parameter Blocks 2500 cycles |
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