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M58LR128FT датащи(PDF) 14 Page - STMicroelectronics |
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M58LR128FT датащи(HTML) 14 Page - STMicroelectronics |
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14 / 82 page ![]() M58LR128FT, M58LR128FB 14/82 ■ The second latches the address and data to be programmed and starts the Program/Erase Controller. Once the programming has started, read opera- tions in the bank being programmed output the Status Register content. During a Program operation, the bank containing the Word being programmed will only accept the Read Array, Read Status Register, Read Electron- ic Signature, Read CFI Query and the Program/ Erase Suspend command, all other commands will be ignored. A Read Array command is re- quired to return the bank to Read Array mode. Refer to Dual Operations section for detailed infor- mation about simultaneous operations allowed in banks not being programmed. Typical Program times are given in Table 15., Program, Erase Times and Endurance Cy- cles. The Program operation aborts if Reset, RP, goes to VIL. As data integrity cannot be guaranteed when the Program operation is aborted, the Word must be reprogrammed. See APPENDIX C., Figure 22., Program Flow- chart and Pseudo Code, for the flowchart for using the Program command. Buffer Program Command The Buffer Program Command makes use of the device’s 32-Word Write Buffer to speed up pro- gramming. Up to 32 Words can be loaded into the Write Buffer. The Buffer Program command dra- matically reduces in-system programming time compared to the standard non-buffered Program command. Four successive steps are required to issue the Buffer Program command. 1. The first Bus Write cycle sets up the Buffer Program command. The setup code can be addressed to any location within the targeted block. After the first Bus Write cycle, read operations in the bank will output the contents of the Status Register. Status Register bit SR7 should be read to check that the buffer is available (SR7 = 1). If the buffer is not available (SR7 = 0), re-issue the Buffer Program command to update the Status Register contents. 2. The second Bus Write cycle sets up the number of Words to be programmed. Value n is written to the same block address, where n+1 is the number of Words to be programmed. 3. Use n+1 Bus Write cycles to load the address and data for each Word into the Write Buffer. Addresses must lie within the range from the start address to the start address + n. Optimum performance is obtained when the start address corresponds to a 32 Word boundary. If the start address is not aligned to a 32 word boundary, the total programming time is doubled 4. The final Bus Write cycle confirms the Buffer Program command and starts the program operation. All the addresses used in the Buffer Program op- eration must lie within the same block. Invalid address combinations or failing to follow the correct sequence of Bus Write cycles will set an error in the Status Register and abort the oper- ation without affecting the data in the memory ar- ray. If the Status Register bits SR4 and SR5 are set to '1', the Buffer Program Command is not accepted. Clear the Status Register before re-issuing the command. If the block being programmed is protected an er- ror will be set in the Status Register and the oper- ation will abort without affecting the data in the memory array. During Buffer Program operations the bank being programmed will only accept the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the Program/Erase Suspend command, all other commands will be ignored. Refer to Dual Operations section for detailed infor- mation about simultaneous operations allowed in banks not being programmed. See Appendix C, figure 27, Buffer Program Flow- chart and Pseudo Code, for a suggested flowchart on using the Buffer Program command. Buffer Enhanced Factory Program Command The Buffer Enhanced Factory Program command has been specially developed to speed up pro- gramming in manufacturing environments where the programming time is critical. It is used to program one or more Write Buffer(s) of 32 Words to a block. Once the device enters Buffer Enhanced Factory Program mode, the Write Buffer can be reloaded any number of times as long as the address remains within the same block. Only one block can be programmed at a time. The use of the Buffer Enhanced Factory Program command requires certain operating conditions: ■ VPP must be set to VPPH ■ VDD must be within operating range ■ Ambient temperature, TA must be 25°C ± 5°C ■ The targeted block must be unlocked ■ The start address must be aligned with the start of a 32 Word buffer boundary |
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