M58LR128FT datasheet(65/82 Pages) STMICROELECTRONICS

65 / 82 page

65/82

M58LR128FT, M58LR128FB

Table 38. Bank and Erase Block Region Information

Note: 1. The variable P is a pointer which is defined at CFI offset 15h.

2. Bank Regions. There are two Bank Regions, see Table 29. and Table 30.

Table 39. Bank and Erase Block Region 1 Information

Flash memory (top)

Flash memory (bottom)

Description

Offset

Data

Offset

Data

(P+23)h = 12Dh

02h

(P+23)h = 12Dh

02h

Number of Bank Regions within the device

Flash memory (top)

Flash memory (bottom)

Description

Offset

Data

Offset

Data

(P+24)h = 12Eh

0Fh

(P+24)h = 12Eh

01h

Number of identical banks within Bank Region 1

(P+25)h = 12Fh

00h

(P+25)h = 12Fh

00h

(P+26)h = 130h

11h

(P+26)h = 130h

11h

Number of program or erase operations allowed in Bank

Region 1:

Bits 0-3: Number of simultaneous program operations

Bits 4-7: Number of simultaneous erase operations

(P+27)h = 131h

00h

(P+27)h = 131h

00h

Number of program or erase operations allowed in other banks

while a bank in same region is programming

Bits 0-3: Number of simultaneous program operations

Bits 4-7: Number of simultaneous erase operations

(P+28)h = 132h

00h

(P+28)h = 132h

00h

Number of program or erase operations allowed in other banks

while a bank in this region is erasing

Bits 0-3: Number of simultaneous program operations

Bits 4-7: Number of simultaneous erase operations

(P+29)h = 133h

01h

(P+29)h = 133h

02h

Types of erase block regions in Bank Region 1

n = number of erase block regions with contiguous same-size

erase blocks.

Symmetrically blocked banks have one blocking region(2).

(P+2A)h = 134h

77h

(P+2A)h = 134h

03h

Bank Region 1 Erase Block Type 1 Information

Bits 0-15: n+1 = number of identical-sized erase blocks

Bits 16-31: n×256 = number of bytes in erase block region

(P+2B)h = 135h

00h

(P+2B)h = 135h

00h

(P+2C)h = 136h

00h

(P+2C)h = 136h

80h

(P+2D)h = 137h

02h

(P+2D)h = 137h

00h

(P+2E)h = 138h

64h

(P+2E)h = 138h

64h

Bank Region 1 (Erase Block Type 1)

Minimum block erase cycles × 1000

(P+2F)h = 139h

00h

(P+2F)h = 139h

00h

(P+30)h = 13Ah

02h

(P+30)h = 13Ah

02h

Bank Region 1 (Erase Block Type 1): BIts per cell, internal

ECC

Bits 0-3: bits per cell in erase region

Bit 4: reserved for “internal ECC used”

BIts 5-7: reserved

(P+31)h = 13Bh

03h

(P+31)h = 13Bh

03h

Bank Region 1 (Erase Block Type 1): Page mode and

Synchronous mode capabilities

Bit 0: Page-mode reads permitted

Bit 1: Synchronous reads permitted

Bit 2: Synchronous writes permitted

Bits 3-7: reserved

M58LR128FT датащи(PDF) 65 Page - STMicroelectronics

M58LR128FT датащи(HTML) 65 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82

датащи скачать

ссылки URL