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COM90C66 датащи(PDF) 71 Page - SMSC Corporation |
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COM90C66 датащи(HTML) 71 Page - SMSC Corporation |
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71 / 76 page ![]() 71 FIGURE 15 - READ RAM CYCLE nMEMR High to nTOPH, nTOPL High t1 t2 t3 t4 t5 t6 Parameter Address, nSBHE Set Up to BALE Low * Address, nSBHE Hold after BALE Low * Address, nSBHE Set Up to nMEMR Low nMEMR Low to Valid Data nMEMR Low to nTOPH, nTOPL Low min 20 20 25 0 0 typ max 30 units nS nS nS nS nS nS 15 t7 nMEMR High to Data High Impedance 0 20 nS t8 nMEMR High to BALE High (Next Address) 30 nS A19-A17 to nMEMCS16 Low (Unlatched) (128K RAM Decode) A19-A11 to nMEMCS16 Low (Latched) (2K RAM Decode) Address, nSBHE invalid to nMEMCS16 High t9 t10 t11 80 25 40 nS nS nS 0 0 0 A0-A19 VALID DATA VALID t2 t1 t3 t4 t5 t8 t9 t10 BALE nMEMR D0-D7 nTOPL nTOPH, nMEMCS16 (Unlatched) nMEMCS16 (Latched) D0-D15 or nSBHE t6 t7 t11 ** t2*** For latched addresses, t1 and t2 do not apply. Please refer to Figure 21 for Latched Address Mode 130ns minimum inactive time on consective memory reads from the COM90C66. For Revision D devices, if BALE is tied high, then Address, nSBHE must be held for 20nsec after nMEMR Low. * ** *** Modified Version of Page 50 for Rev. D COM90C66 Only. |
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