QPD1015LEVB2 datasheet(5/27 Pages) QORVO

5 / 27 page

QPD1015L

65W, 50V, DC – 3.7 GHz, GaN RF Transistor

Rev. C

- 5 of 27 -

Disclaimer: Subject to change without notice

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Thermal and Reliability Information - Pulsed

Parameter

Conditions

Values

Units

Thermal Resistance (θJC)

85 °C Case

10.5 W Pdiss, 128 uS PW, 10% DC

2.00

°C/W

Peak Channel Temperature (TCH)

106

°C

Median Lifetime (TM)

1.1E13

Hrs

Thermal Resistance (θJC)

85 °C Case

21 W Pdiss, 128 uS PW, 10% DC

2.14

°C/W

Peak Channel Temperature (TCH)

130

°C

Median Lifetime (TM)

5.2E11

Hrs

Thermal Resistance (θJC)

85 °C Case

31.5 W Pdiss, 128 uS PW, 10% DC

2.22

°C/W

Peak Channel Temperature (TCH)

155

°C

Median Lifetime (TM)

3.2E10

Hrs

Thermal Resistance (θJC)

85 °C Case

42 W Pdiss, 128 uS PW, 10% DC

2.33

°C/W

Peak Channel Temperature (TCH)

183

°C

Median Lifetime (TM)

2.0E9

Hrs

Thermal Resistance (θJC)

85 °C Case

52.5 W Pdiss, 128 uS PW, 10% DC

2.46

°C/W

Peak Channel Temperature (TCH)

214

°C

Median Lifetime (TM)

1.4E8

Hrs

Thermal Resistance (θJC)

85 °C Case

63 W Pdiss, 128 uS PW, 10% DC

2.59

°C/W

Peak Channel Temperature (TCH)

248

°C

Median Lifetime (TM)

9.8E6

Hrs

100

120

140

160

180

200

220

240

260

280

0.0

10.0

20.0

30.0

40.0

50.0

60.0

70.0

Pulsed Dissipation Power, W

Peak Channel Temperature vs. Pulsed Dissipation Power

Package Base at 85

°C

128 uS, 10% Pulsed

1E6 hours reliability temperature limit

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