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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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QPD1015LEVB2 датащи(PDF) 8 Page - Qorvo, Inc |
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QPD1015LEVB2 датащи(HTML) 8 Page - Qorvo, Inc |
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8 / 27 page  QPD1015L 65W, 50V, DC – 3.7 GHz, GaN RF Transistor Rev. C - 8 of 27 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Load-Pull Smith Charts1, 2, 3 Notes: 1. 50 V, 65 mA, Pulsed signal with 128 uS pulse width and 10 % duty cycle. Performance is at indicated input power. 2. See page 17 for load-pull and source-pull reference planes. 11.7- Ω load-pull TRL fixtures are built with 32-mil RO4360G2 material. 3. NaN means the impedances are either undefined or varying in load-pull system. 1GHz, Load-pull 48.2 48 47.8 23.1 22.6 22.1 73.4 71.4 69.4 •••• Max Power is 48.4dBm at Z = 13.148+7.146iΩ Ω Ω Ω Γ Γ Γ Γ = 0.1302+0.2501i •••• Max Gain is 39.6dB at Z = 7.015+24.956iΩ Ω Ω Ω Γ Γ Γ Γ = 0.5499+0.6001i •••• Max PAE is 75.4% at Z = 12.026+19.447iΩ Ω Ω Ω Γ Γ Γ Γ = 0.4101+0.4835i Zo = 11.7Ω Ω Ω Ω 3dB Compression Referenced to Peak Gain Zs(fo) = 3.87+3.24iΩ Ω Ω Ω Zs(2fo) = 19.63-29.53iΩ Ω Ω Ω Zs(3fo) = 1.87-0.01iΩ Ω Ω Ω Zl(2fo) = 5.92+15.23iΩ Ω Ω Ω Zl(3fo) = NaNΩ Ω Ω Ω Power Gain PAE |
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