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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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QPD1015LEVB2 датащи(PDF) 9 Page - Qorvo, Inc |
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QPD1015LEVB2 датащи(HTML) 9 Page - Qorvo, Inc |
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9 / 27 page  QPD1015L 65W, 50V, DC – 3.7 GHz, GaN RF Transistor Rev. C - 9 of 27 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Load-Pull Smith Charts1, 2, 3 Notes: 1. 50 V, 65 mA, Pulsed signal with 128 uS pulse width and 10 % duty cycle. Performance is at indicated input power. 2. See page 17 for load-pull and source-pull reference planes. 11.7- Ω load-pull TRL fixtures are built with 32-mil RO4360G2 material. 3. NaN means the impedances are either undefined or varying in load-pull system. 2GHz, Load-pull 48.4 48.2 48 18.4 17.9 17.4 73.9 71.9 69.9 •••• Max Power is 48.5dBm at Z = 6.912+2.144iΩ Ω Ω Ω Γ Γ Γ Γ = -0.2408+0.143i •••• Max Gain is 18.8dB at Z = 4.751+8.724iΩ Ω Ω Ω Γ Γ Γ Γ = -0.1102+0.5888i •••• Max PAE is 74.1% at Z = 4.739+6.325iΩ Ω Ω Ω Γ Γ Γ Γ = -0.2399+0.4771i Zo = 11.7Ω Ω Ω Ω 3dB Compression Referenced to Peak Gain Zs(fo) = 2.24-3.15iΩ Ω Ω Ω Zs(2fo) = 18.84-32.27iΩ Ω Ω Ω Zs(3fo) = 9.37-12.29iΩ Ω Ω Ω Zl(2fo) = 3.57+5.04iΩ Ω Ω Ω Zl(3fo) = NaNΩ Ω Ω Ω Power Gain PAE |
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