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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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QPD1015LEVB2 датащи(PDF) 10 Page - Qorvo, Inc |
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QPD1015LEVB2 датащи(HTML) 10 Page - Qorvo, Inc |
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10 / 27 page  QPD1015L 65W, 50V, DC – 3.7 GHz, GaN RF Transistor Rev. C - 10 of 27 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Load-Pull Smith Charts1, 2, 3 Notes: 1. 50 V, 65 mA, Pulsed signal with 128 uS pulse width and 10 % duty cycle. Performance is at indicated input power. 2. See page 17 for load-pull and source-pull reference planes. 11.7- Ω load-pull TRL fixtures are built with 32-mil RO4360G2 material. 3. NaN means the impedances are either undefined or varying in load-pull system. 3GHz, Load-pull 48.7 48.5 48.3 14 13.5 13 68.5 66.5 64.5 •••• Max Power is 48.7dBm at Z = 6.495-1.217iΩ Ω Ω Ω Γ Γ Γ Γ = -0.2803-0.0856i •••• Max Gain is 14.5dB at Z = 3.872+3.762iΩ Ω Ω Ω Γ Γ Γ Γ = -0.4198+0.343i •••• Max PAE is 69% at Z = 3.197+1.23iΩ Ω Ω Ω Γ Γ Γ Γ = -0.5602+0.1288i Zo = 11.7Ω Ω Ω Ω 3dB Compression Referenced to Peak Gain Zs(fo) = 3.37-7.51iΩ Ω Ω Ω Zs(2fo) = 8.15+10.7iΩ Ω Ω Ω Zs(3fo) = 7.58+0.08iΩ Ω Ω Ω Zl(2fo) = 5.51-6.89iΩ Ω Ω Ω Zl(3fo) = NaNΩ Ω Ω Ω Power Gain PAE |
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