QPD1015LEVB2 datasheet(3/27 Pages) QORVO

3 / 27 page

QPD1015L

65W, 50V, DC – 3.7 GHz, GaN RF Transistor

Rev. C

- 3 of 27 -

Disclaimer: Subject to change without notice

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Pulsed Characterization – Load-Pull Performance – Efficiency Tuned

Parameters

Typical Values

Unit

Frequency, F

3.5

GHz

Linear Gain, GLIN

26.0

21.5

16.6

15.8

Output Power at 3dB

compression point, P3dB

45.6

46.9

47.1

47.8

dBm

Power-Added-Efficiency at 3dB

compression point, PAE3dB

75.4

74.1

69.0

59.4

Gain at 3dB compression point,

G3dB

23.0

18.5

13.6

12.8

Notes:

Test conditions unless otherwise noted: VD = +50 V, IDQ = 65 mA, Temp = +25 °C

Pulsed Characterization – Load-Pull Performance – Power Tuned

Parameters

Typical Values

Unit

Frequency, F

3.5

GHz

Linear Gain, GLIN

25.3

20.2

16.1

14.6

Output Power at 3dB

compression point, P3dB

48.4

48.5

48.7

dBm

Power-Added-Efficiency at 3dB

compression point, PAE3dB

67.3

62.1

58.6

51.1

Gain at 3dB compression point

22.3

17.2

13.1

11.6

Notes:

Test conditions unless otherwise noted: VD = +50 V, IDQ = 65 mA, Temp = +25 °C

0.96 – 1.215 GHz EVB Performance1

Parameter

Min

Typ

Max

Units

Linear Gain, GLIN

–

Output Power at 3dB compression point, P3dB

–

Drain Efficiency at 3dB compression point,

DEFF3dB

63.5

–

Gain at 3dB compression point, G3dB

–

Notes:

1. F = 1.1 GHz, VD = +50 V, IDQ = 65 mA, Temp = +25 °C, Pulse Width = 128 uS, Duty Cycle = 10%

RF Characterization – Mismatch Ruggedness at 1.1 GHz

Symbol Parameter

dB Compression

Typical

VSWR

Impedance Mismatch Ruggedness

10:1

Test conditions unless otherwise noted: TA = 25 °C, VD = 50 V, IDQ = 65 mA

Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector.

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