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NVMFS021N10MCL датащи(PDF) 3 Page - ON Semiconductor

номер детали NVMFS021N10MCL
подробное описание детали  MOSFET ??Power, Single N-Channel 100 V, 23 m, 31 A
PDF  8 Pages
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производитель  ONSEMI [ON Semiconductor]
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NVMFS021N10MCL датащи(HTML) 3 Page - ON Semiconductor

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TYPICAL PERFORMANCE CHARACTERISTICS
0,001
1000
10
30
50
70
90
0
5
10
15
20
25
01
34
0,5
1
1,5
2
2,5
−50 −25
0
25
50
75
100 125 150 175
10
15
20
25
30
35
40
45
50
55
1
3
579
0123
45
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
0
5
20
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
10
30
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 150°C
TJ = 25°C
TJ = −55°C
TJ = 25°C
ID = 7 A
VGS = 10 V
ID = 7 A
TJ = 125°C
TJ = 85°C
TJ = 150°C
VGS = 3.2 V to 10 V
7
TJ = 175°C
TJ = 25°C
13
15
15
25
59
20
VDS = 10 V
25
10
30
VGS = 2.8 V
VGS = 2.6 V
24
68
10
6
24
8
10
TJ = 25°C
VGS = 10 V
VGS = 4.5 V
0,01
0,1
1
10
100
20
40
60
80
100
2
30



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