NVMFS021N10MCL datasheet(4/8 Pages) ONSEMI

номер детали	NVMFS021N10MCL

подробное описание детали	MOSFET ??Power, Single N-Channel 100 V, 23 m, 31 A

PDF	8 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

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NVMFS021N10MCL

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TYPICAL CHARACTERISTICS (continued)

0,1

0,2

0,3

0,4

0,5

0,6

0,7

0,8

0,9

100

1000

10000

2040

6080

100

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source Voltage vs. Total

Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. IPEAK vs. Time in Avalanche

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TIME IN AVALANCHE (s)

1000

0,1

100

1000

VGS = 0 V

TJ = 25°C

f = 1 MHz

CISS

COSS

CRSS

VDS = 50 V

ID = 7 A

TJ = 25°C

QGS

QGD

VGS = 10 V

VDS = 50 V

ID = 7 A

td(off)

td(on)

Tj (initial) = 125°C

Tj (initial) = 25°C

0,0001

0,01

100

VGS = 0 V

100

0,1

214

412

RDS(on) Limit

Thermal Limit

Package Limit

10 ms

0.5

1 ms

10 ms

VGS ≤10 V

Single Pulse

TC = 25°C

0,001

TJ = 175°C

TJ = 150°C

TJ = 25°C

TJ = −55°C

TJ = 125°C

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