NVMFS021N10MCL datasheet(1/8 Pages) ONSEMI

номер детали	NVMFS021N10MCL

подробное описание детали	MOSFET ??Power, Single N-Channel 100 V, 23 m, 31 A

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DATA SHEET

www.onsemi.com

December, 2021 − Rev. 0

1

Publication Order Number:

NVMFS021N10MCL/D

MOSFET – Power, Single

N-Channel

100 V, 23 mW, 31 A

NVMFS021N10MCL

Features

• Small Footprint (5x6 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• NVMFWS021N10MCL − Wettable Flank Option for Enhanced

Optical Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

100

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJC

(Notes 1, 3)

Steady

State

TC = 25°C

ID

31

A

TC = 100°C

22

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

49

W

TC = 100°C

24

Continuous Drain

Current RqJA

(Notes 1, 2, 3)

Steady

State

TA = 25°C

ID

8.4

A

TA = 100°C

ID

5.9

Power Dissipation

RqJA (Notes 1, 2)

TA = 25°C

PD

3.6

W

TA = 100°C

1.8

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

159

A

Operating Junction and Storage Temperature

Range

TJ, Tstg

−55 to

+175

°C

Source Current (Body Diode

IS

37

A

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 1.4 A)

EAS

179

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

RqJC

3.1

°C/W

Junction−to−Ambient − Steady State (Note 2)

RqJA

42

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

MARKING

DIAGRAM

XXXXXX

AYWZZ

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5,6)

S

G

D

1

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

ORDERING INFORMATION

V(BR)DSS

RDS(ON) MAX

ID MAX

100 V

23 mW @ 10 V

31 A

33 mW @ 4.5 V

DFN5

CASE 488AA

STYLE 1

XXXXXX = Specific Device Code

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

DFNW5

(For WF Version)

CASE 507BA

XXXXXX

AYWZZ

S

G

D

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