 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
NVMFS021N10MCL датащи(PDF) 2 Page - ON Semiconductor |
|
|
|||||||||||||||||||||||||||||
NVMFS021N10MCL датащи(HTML) 2 Page - ON Semiconductor |
|
|
2 / 8 page  NVMFS021N10MCL www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ − 48 − mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 100 V TJ = 25 °C − − 1.0 mA TJ = 125°C − − 100 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V − − 100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 42 mA 1 − 3 V Threshold Temperature Coefficient VGS(TH)/TJ − −5.4 − mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 7 A − 19 23 mW VGS = 4.5 V ID = 6 A − 26 33 Forward Transconductance gFS VDS = 10 V, ID = 7 A − 24 − S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 50 V − 850 − pF Output Capacitance COSS − 310 − Reverse Transfer Capacitance CRSS − 5 − Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 50 V; ID = 6 A − 6 − nC Total Gate Charge QG(TOT) VGS = 10 V, VDS = 50 V; ID = 7 A − 13 − nC Threshold Gate Charge QG(TH) VGS = 10 V, VDS = 50 V; ID = 7 A − 1 − nC Gate−to−Source Charge QGS − 2.4 − Gate−to−Drain Charge QGD − 1.7 − Plateau Voltage VGP − 2.8 − V SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(ON) VGS = 10 V, VDS = 50 V, ID = 7 A, RG = 6.0 W − 6.4 − ns Rise Time tr − 2.4 − Turn−Off Delay Time td(OFF) − 19 − Fall Time tf − 3.3 − DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 7 A, TJ = 25 °C − 0.83 1.3 V VGS = 0 V, IS = 7 A, TJ = 125 °C − 0.71 − Reverse Recovery Time tRR VGS = 0 V, dlS/dt = 100 A/ms, IS = 4 A − 29 − ns Reverse Recovery Charge QRR − 18 − nC Charge Time ta − 14.8 − ns Discharge Time tb − 14.2 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Switching characteristics are independent of operating junction temperatures. |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
