| производитель | номер детали | датащи | подробное описание детали |
ON Semiconductor |
NTD6415AN
|
143Kb / 7P |
N-Channel Power MOSFET 100 V, 23 A, 55 m廓
November, 2009 ??Rev. 0 |
|
NTD6415ANL
|
265Kb / 6P |
N-Channel Power MOSFET 100 V, 23 A, 56 m廓, Logic Level
March, 2010 -- Rev. 0 |
Fairchild Semiconductor |
FDS86141
|
239Kb / 7P |
N-Channel PowerTrench짰 MOSFET 100 V, 7 A, 23 m?
|
ON Semiconductor |
NVD6415ANLT4G
|
127Kb / 6P |
N-Channel Power MOSFET 100 V, 23 A, 56 m Logic Level
October, 2011 ??Rev. 1 |
|
NTHL080N120SC1
|
374Kb / 7P |
MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A
April, 2020 ??Rev. 4 |
|
NTHL080N120SC1A
|
288Kb / 7P |
MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A
April, 2020 ??Rev. 1 |
|
NTMFD6H846NL
|
140Kb / 6P |
MOSFET - Power, Dual N-Channel 80 V, 15 m, 31 A
March, 2020 ??Rev. 0 |
|
NTMFS034N15MC
|
223Kb / 8P |
MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 31 m, 31 A
May, 2020 ??Rev. 0 |
|
NVMYS021N10MCL
|
324Kb / 6P |
MOSFET – Power, Single N-Channel 100 V, 23 m, 31 A
June, 2022 - Rev. 0 |
|
NTD6415AN
|
238Kb / 8P |
MOSFET – Power, N-Channel 100 V, 23 A, 55 m
June, 2019 - Rev. 2 |
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