1. Product profile

1.1 General description

A 1200 W LDMOS power transistor for broadcast applications and industrial applications

in the HF to 110 MHz band.

1.2 Features and benefits



Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an



Output power = 1200 W



Power gain = 28.5 dB



Efficiency = 75 %



Easy power control



Integrated ESD protection



Excellent ruggedness



High efficiency



Excellent thermal stability



Designed for broadband operation (10 MHz to 110 MHz)



Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



Industrial, scientific and medical applications



FM transmitter applications

BLF178P

Power LDMOS transistor

Rev. 3 — 1 September 2015

Product data sheet

Table 1.

Application information

Test signal

f

(MHz)

(V)

(W)

(dB)

(%)

CW

108

50

1000

26

75

pulsed RF

108

50

1200

28.5

75