BLF178P datasheet(4/13 Pages) AMPLEON

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BLF178P#3

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Product data sheet

Rev. 3 — 1 September 2015

4 of 13

BLF178P

Power LDMOS transistor

6.1 Ruggedness in class-AB operation

The BLF178P is capable of withstanding a load mismatch corresponding to

VSWR = 13 : 1 through all phases under the following conditions: VDS =50V;

IDq =40mA; PL = 1200 W pulsed; f = 108 MHz.

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10 V

IGSS

gate leakage current

VGS = 11 V; VDS = 0 V

280

RDS(on)

drain-source on-state

resistance

VGS =VGS(th) + 3.75 V;

ID =16.66 A

-0.07



Crs

feedback capacitance

VGS =0V; VDS =50 V;

f= 1 MHz

-3

Ciss

input capacitance

VGS =0V; VDS =50 V;

f=1MHz

-403

Coss

output capacitance

VGS =0V; VDS =50 V;

f=1MHz

-138

Table 7.

RF characteristics

Test signal: pulsed RF; tp = 100 s;  = 20 %; f = 108 MHz; RF performance at VDS =50 V;

IDq =40mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 1200 W

28.5

RLin

input return loss

PL = 1200 W

16

12

D

drain efficiency

PL = 1200 W

VGS = 0 V; f = 1 MHz.

Fig 2.

Output capacitance as a function of drain-source voltage; typical values per

section

Table 6.

DC characteristics …continued

Tj = 25 C; per section unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

VDS (V)

050

001aaj113

300

150

450

600

750

900

Coss

(pF)

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