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BLF178P датащи(PDF) 7 Page - Ampleon Netherlands B.V. |
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BLF178P датащи(HTML) 7 Page - Ampleon Netherlands B.V. |
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7 / 13 page ![]() BLF178P#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 7 of 13 BLF178P Power LDMOS transistor IDq = 40 mA; f = 108 MHz; tp = 100 s; =20 %. (1) VDS =15V (2) VDS =20V (3) VDS =25V (4) VDS =30V (5) VDS =35V (6) VDS =40V (7) VDS =45V (8) VDS =50V IDq = 40 mA; f = 108 MHz; tp = 100 s; =20%. (1) VDS =15V (2) VDS =20V (3) VDS =25V (4) VDS =30V (5) VDS =35V (6) VDS =40V (7) VDS =45V (8) VDS =50V Fig 8. Power gain as a function of output power; typical values Fig 9. Drain efficiency as a function of output power; typical values aaa-002246 32 Gp (dB) 20 PL (W) 0 400 800 1200 1400 1000 600 200 30 28 26 24 22 (6) (5) (4) (3) (7) (2) (8) (1) aaa-002247 90 ηD (%) 10 PL (W) 0 400 800 1200 1400 1000 600 200 30 50 70 (6) (5) (4) (3) (7) (2) (8) (1) |
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