BLF178P datasheet(3/13 Pages) AMPLEON

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BLF178P#3

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Product data sheet

Rev. 3 — 1 September 2015

3 of 13

BLF178P

Power LDMOS transistor

5. Thermal characteristics

[1]

Tj is the junction temperature.

[2]

Rth(j-c) is measured under RF conditions.

[3]

See Figure 1.

6. Characteristics

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

Rth(j-c)

thermal resistance from junction to case

Tj = 150 C

[1][2] 0.14

K/W

Zth(j-c)

transient thermal impedance from junction to case

Tj =150 C; tp = 100 s;  =20%

[3] 0.04

K/W

(1)

 = 1 %

(2)

 = 2 %

(3)

 = 5 %

(4)

 = 10 %

(5)

 = 20 %

(6)

 = 50 %

(7)

 = 100 % (DC)

Fig 1.

Transient thermal impedance from junction to case as a function of pulse duration

001aak924

0.06

0.12

0.18

Zth(j-c)

(K/W)

10−7

10−1

10−4

10−6

10−3

tp (s)

10−5

10−2

(7)

(6)

(5)

(4)

(3)

(2)

(1)

Table 6.

DC characteristics

Tj = 25 C; per section unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown

voltage

VGS =0V; ID =2.5 mA

110

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 500 mA 1.25

1.7

2.25

VGSq

gate-source quiescent voltage VDS =50 V; ID =20mA

0.8

1.3

1.8

IDSS

drain leakage current

VGS =0V; VDS =50 V

2.8

A

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