BLF178P datasheet(5/13 Pages) AMPLEON

номер детали	BLF178P

подробное описание детали	Power LDMOS transistor

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производитель	AMPLEON [Ampleon Netherlands B.V.]

домашняя страница	https://www.ampleon.com

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BLF178P#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

5 of 13

BLF178P

Power LDMOS transistor

7. Test information

7.1 Impedance information

7.2 RF performance

The following figures are measured in a class-AB production test circuit.

7.2.1 1-Tone CW pulsed

Table 8.

Typical impedance

Simulated ZS and ZL test circuit impedances.

MHz



108

3.91

 j3.56

3.59

 j1.73

Fig 3.

Definition of transistor impedance

001aaf059

drain

gate

VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;

 =20%.

VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;

 =20 %.

(1) PL(1dB) = 60.8 dBm (1214 W)

(2) PL(3dB) = 61.2 dBm (1319 W)

Fig 4.

Power gain and drain efficiency as function of

output power; typical values

Fig 5.

Output power as a function of input power;

typical values

aaa-002242

(dB)

ηD

(%)

PL (W)

100

500

900

1300

1500

1100

700

300

ηD

aaa-002243

Pi (dBm)

(dBm)

Ideal PL

(1)

(2)

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