NXP Semiconductors

MF4SAM3

MIFARE SAM AV3 secure access module

MF4SAM3

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Product short data sheet

Rev. 3.0 — 2 August 2019

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9.2 Non-Volatile memory

Table 12. Non-volatile memory characteristics

Symbol Parameter

Conditions

Min

Typ[1]

Max

Unit

EEPROM erase/program time

[2]

-

2.00

-

ms

EEPROM erase time

-

1.25

-

ms

EEPROM program time

-

0.75

-

ms

EEPROM data retention time

25

-

-

years

EEPROM endurance (number of

programming cycles)

-

-

cycles

number of programming cycles

applied to the whole memory

block)

cycles

[1]

Typical values are only referenced for information. They are subject to change without notice.

[2]

Given value specifies physical access times of EEPROM memory only.

Table 13. Non-volatile memory characteristics

Symbol Parameter

Conditions

Min

Max

Unit

SCL clock frequency

0

350

kHz

hold time (repeated) START condition after this period, the first clock pulse is

generated

4000

-

ns

set-up time for a repeated START

condition

4700

-

ns

set-up time for STOP condition

4000

-

ns

LOW period of the SCL clock

4700

-

ns

HIGH period of the SCL clock

4000

-

ns

data hold time

300

3450

ns

data set-up time

250

-

ns

data valid time

-

3450

ns

data vlid acknowledge

-

3450

ns

rise time

SDA and SCL signals

-

1000

ns

fall time

SDA and SCL signals

-

300

ns

bus free time between a STOP and

START condition

4700

-

ns