AT45DB321E datasheet(35/70 Pages) DIALOG

35 / 70 page

AT45DB321E

8784L–DFLASH–3/2019

10.

Buffer and Page Size Configuration

The memory array of DataFlash devices is actually larger than other Serial Flash devices in that extra user-accessible

bytes are provided in each page of the memory array. For the AT45DB321E, there are an extra 16 bytes of memory in

each page for a total of an extra 128KB (1-Mbits) of user-accessible memory. Therefore, the device density is actually

33-Mbits instead of 32-Mbits.

Some applications, however, may not want to take advantage of this extra memory and instead architect their software to

operate on a “power of 2” binary, logical addressing scheme. To allow this, the DataFlash can be configured so that the

buffer and page sizes are 512 bytes instead of the standard 528 bytes. In addition, the configuration of the buffer and

page sizes is reversible and can be changed from 528 bytes to 512 bytes or from 512 bytes to 528 bytes. The configured

setting is stored in an internal nonvolatile register so that the buffer and page size configuration is not affected by power

cycles. The nonvolatile register has a limit of 10,000 erase/program cycles; therefore, care should be taken to not switch

between the size options more than 10,000 times.

Devices are initially shipped from Adesto with the buffer and page sizes set to 528 bytes. Devices can be ordered from

Adesto pre-configured for the “power of 2” binary size of 512 bytes. For details, see Section 26., Ordering Information on

page 63.

To configure the device for “power of 2” binary page size (512 bytes), a 4-byte opcode sequence of 3Dh, 2Ah, 80h, and

A6h must be clocked into the device. After the last bit of the opcode sequence has been clocked in, the CS pin must be

deasserted to initiate the internally self-timed configuration process and nonvolatile register program cycle. The

programming of the nonvolatile register should take place in a time of t

EP, during which time the RDY/BUSY bit in the

Status Register will indicate that the device is busy. The device does not need to be power cycled after the completion of

the configuration process and register program cycle in order for the buffer and page size to be configured to 512 bytes.

To configure the device for standard DataFlash page size (528 bytes), a 4-byte opcode sequence of 3Dh, 2Ah, 80h, and

A7h must be clocked into the device. After the last bit of the opcode sequence has been clocked in, the CS pin must be

deasserted to initial the internally self-timed configuration process and nonvolatile register program cycle. The

programming of the nonvolatile register should take place in a time of tEP, during which time the RDY/BUSY bit in the

Status Register will indicate that the device is busy. The device does not need to be power cycled after the completion of

the configuration process and register program cycle in order for the buffer and page size to be configured to 528 bytes.

Table 10-1. Buffer and Page Size Configuration Commands

Figure 10-1. Buffer and Page Size Configuration

Command

Byte 1

Byte 2

Byte 3

Byte 4

“Power of 2” binary page size (512 bytes)

3Dh

2Ah

80h

A6h

DataFlash page size (528 bytes)

3Dh

2Ah

80h

A7h

3Dh

2Ah

80h

Opcode

Byte 4

Each transition represents eight bits

AT45DB321E датащи(PDF) 35 Page - Dialog Semiconductor

AT45DB321E датащи(HTML) 35 Page - Dialog Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70

датащи скачать

ссылки URL