AT45DB321E datasheet(12/70 Pages) DIALOG

12 / 70 page

AT45DB321E

8784L–DFLASH–3/2019

programming of the page are internally self-timed and should take place in a maximum time of tEP. During this time, the

RDY/BUSY bit in the Status Register will indicate that the device is busy.

The device also incorporates an intelligent erase and programming algorithm that can detect when a byte location fails to

erase or program properly. If an erase or program error arises, it will be indicated by the EPE bit in the Status Register.

6.5

Main Memory Byte/Page Program through Buffer 1 without Built-In Erase

The Main Memory Byte/Page Program through Buffer 1 without Built-In Erase command combines both the Buffer Write

and Buffer to Main Memory Program without Built-In Erase operations to allow any number of bytes (1 to 512/528 bytes)

to be programmed directly into previously erased locations in the main memory array. With the Main Memory Byte/Page

Program through Buffer 1 without Built-In Erase command, data is first clocked into Buffer 1, and then only the bytes

clocked into the buffer are programmed into the pre-erased byte locations in main memory. Multiple bytes up to the page

size can be entered with one command sequence.

To perform a Main Memory Byte/Page Program through Buffer 1 using the standard DataFlash page size (528 bytes), an

opcode of 02h must first be clocked into the device followed by three address bytes comprised of one dummy bit,

13 page address bits (PA12 - PA0) that specify the page in the main memory to be written, and 10 buffer address bits

(BFA9 - BFA0) that select the first byte in the buffer to be written. After all address bytes are clocked in, the device will

take data from the input pin (SI) and store it in Buffer 1. Any number of bytes (1 to 528) can be entered. If the end of the

buffer is reached, then the device will wrap around back to the beginning of the buffer.

To perform a Main Memory Byte/Page Program through Buffer 1 using the binary page size (512 bytes), an opcode of

02h for Buffer 1 using must first be clocked into the device followed by three address bytes comprised of two dummy bits,

13 page address bits (A21 - A9) that specify the page in the main memory to be written, and nine buffer address bits

(BFA8 - BFA0) that selects the first byte in the buffer to be written. After all address bytes are clocked in, the device will

take data from the input pin (SI) and store it in Buffer 1. Any number of bytes (1 to 512) can be entered. If the end of the

buffer is reached, then the device will wrap around back to the beginning of the buffer. When using the binary page size,

the page and buffer address bits correspond to a 22-bit logical address (A21-A0) in the main memory.

After all data bytes have been clocked into the device, a low-to-high transition on the CS pin will start the program

operation in which the device will program the data stored in Buffer 1 into the main memory array. Only the data bytes

that were clocked into the device will be programmed into the main memory.

Example:

If only two data bytes were clocked into the device, then only two bytes will be programmed into main

memory and the remaining bytes in the memory page will remain in their previous state.

The CS pin must be deasserted on a byte boundary (multiples of eight bits); otherwise, the operation will be aborted and

no data will be programmed. The programming of the data bytes is internally self-timed and should take place in a

maximum time of t

P (the program time will be a multiple of the tBP time depending on the number of bytes being

programmed). During this time, the RDY/BUSY bit in the Status Register will indicate that the device is busy.

The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program

properly. If a programming error arises, it will be indicated by the EPE bit in the Status Register.

6.6

Read-Modify-Write

A completely self-contained read-modify-write operation can be performed to reprogram any number of sequential bytes

in a page in the main memory array without affecting the rest of the bytes in the same page. This command allows the

device to easily emulate an EEPROM by providing a method to modify a single byte or more in the main memory in a

single operation, without the need for pre-erasing the memory or the need for any external RAM buffers. The

Read-Modify-Write command is essentially a combination of the Main Memory Page to Buffer Transfer, Buffer Write, and

Buffer to Main Memory Page Program with Built-in Erase commands.

To perform a Read-Modify-Write using the standard DataFlash page size (528 bytes), an opcode of 58h for Buffer 1 or

59h for Buffer 2 must be clocked into the device followed by three address bytes comprised of 1 dummy bit, 13 page

address bits (PA12 - PA0) that specify the page in the main memory to be written, and 10 byte address bits (BA9 - BA0)

that designate the starting byte address within the page to reprogram.

To perform a Read-Modify-Write using the binary page size (512 bytes), an opcode of 58h for Buffer 1 or 59h for Buffer 2

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