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AT45DB321E датащи(PDF) 31 Page - Dialog Semiconductor |
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AT45DB321E датащи(HTML) 31 Page - Dialog Semiconductor |
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31 / 70 page ![]() 30 AT45DB321E 8784L–DFLASH–3/2019 9. Deep Power-Down During normal operation, the device will be placed in the standby mode to consume less power as long as the CS pin remains deasserted and no internal operation is in progress. The Deep Power-Down command offers the ability to place the device into an even lower power consumption state called the Deep Power-Down mode. When the device is in the Deep Power-Down mode, all commands including the Status Register Read command will be ignored with the exception of the Resume from Deep Power-Down command. Since all commands will be ignored, the mode can be used as an extra protection mechanism against program and erase operations. Entering the Deep Power-Down mode is accomplished by simply asserting the CS pin, clocking in the opcode B9h, and then deasserting the CS pin. Any additional data clocked into the device after the opcode will be ignored. When the CS pin is deasserted, the device will enter the Deep Power-Down mode within the maximum time of t EDPD. The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and return to the standby mode once the CS pin is deasserted. In addition, the device will default to the standby mode after a power cycle. The Deep Power-Down command will be ignored if an internally self-timed operation such as a program or erase cycle is in progress. The Deep Power-Down command must be reissued after the internally self-timed operation has been completed in order for the device to enter the Deep Power-Down mode. Figure 9-1. Deep Power-Down SCK CS SI SO MSB ICC 2 3 1 0 1 0 1 1 1 0 0 1 6 7 5 4 Opcode High-impedance Standby Mode Current Active Current Deep Power-Down Mode Current tEDPD |
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