Table 4-4. Power-up Conditions(1)

Symbol

Parameter

Min. Max. Units

100

－

µs

Power-on Reset Threshold Voltage

－

1.5

V

1

－

ms

Note: 

1.

These parameters are characterized but they are not 100% tested in production.

requirements defined in this section.

4.5.2

Pin Capacitance

Symbol

Test Condition

Max.

Units

Conditions

Input/Output Capacitance (SDA)

8

pF

Input Capacitance (A2 and SCL)

6

pF

Note: 

1.

This parameter is characterized but is not 100% tested in production.

4.5.3

EEPROM Cell Performance Characteristics

Table 4-6. EEPROM Cell Performance Characteristics

Operation

Test Condition

Min.

Max.

Units

Byte(2) or Page Write mode

1,000,000

—

Write Cycles

Data Retention(1)

100

—

Years

Notes: 

1.

Performance is determined through characterization and the qualification process.

2.

Due to the memory array architecture, the Write Cycle Endurance is specified for writes in groups of four data

bytes. The beginning of any 4-byte boundaries can be determined by multiplying any integer (N) by four (i.e.,

4*N). The end address can be found by adding three to the beginning value (i.e., 4*N+3). See Internal Writing

Methodology for more details on this implementation.

AT24CM02

Electrical Characteristics

Datasheet

DS20006197C-page 12