QPD1025LEVB2 datasheet(4/27 Pages) QORVO

4 / 27 page

QPD1025L

1800 W, 65 V, 0.96

– 1.215GHz, GaN RF Input-Matched Transistor

Datasheet Rev. K, May 2020

│ Subject to changewithout notice

- 4 of 26-

www.qorvo.com

RF Characterization

– 1.0 – 1.1 GHz EVB1 Performance at 1.05 GHz 1

Parameter

Min

Typ

Max

Units

Linear Gain, GLIN

–

21.2

–

Output Power at 3dB compression point, P3dB

–

1461

–

Drain Ef f iciency at 3dB compression point, DEFF3dB

–

73.2

–

Gain at 3dB compression point, G3dB

–

18.2

–

Gate Leakage

VD = +10 V, VG = −3.3 V

- 25 2

–

Notes:

VD = 65 V, IDQ = 1.5 A (combined), Temp = +25 °C, Pulse Width = 100 us, Duty Cycle = 10%

Gate Leakage per path

RF Characterization

– 0.96 – 1.215 GHz EVB2 Performance 1

Parameter

Typ 0.96 GHz

Typ 1.08 GHz

Typ 1.2GHz

Units

Linear Gain, GLIN

19.5

19.6

Output Power at 2dB compression point, P2dB

1800

1678

1570

Drain Ef f iciency at 2dB compression point, DEFF2dB

Gain at 2dB compression point, G2dB

17.5

17.6

Gate Leakage

VD = +10 V, VG = −3.3 V

- 25 2

–

Notes:

VD = 65 V, IDQ = 1.5 A (combined), Temp = +25 °C, Pulse Width = 100 us, Duty Cycle = 10%

Gate Leakage per path

RF Characterization

– Mismatch Ruggedness at 1.0 GHz 1, 2, 3

Symbol Parameter

dB Compression

Typical

VSWR

Impedance Mismatch Ruggedness

10:1

Notes

Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 1.5 A (combined)

Input drive power is determined at pulsed 3dB compression under matched co ndition at EVB output connector

Pulse: 100us, 10% Duty cycle

QPD1025LEVB2 датащи(PDF) 4 Page - Qorvo, Inc

QPD1025LEVB2 датащи(HTML) 4 Page - Qorvo, Inc

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27

датащи скачать

ссылки URL