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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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QPD1025LEVB2 датащи(PDF) 13 Page - Qorvo, Inc |
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QPD1025LEVB2 датащи(HTML) 13 Page - Qorvo, Inc |
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13 / 27 page  QPD1025L 1800 W, 65 V, 0.96 – 1.215GHz, GaN RF Input-Matched Transistor Datasheet Rev. K, May 2020 │ Subject to changewithout notice - 13 of 26- www.qorvo.com Measured Load-Pull Smith Charts at 50V 1, 2, 3 Notes: 1. Test Conditions: VD = 50 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See ”Pin Configuration and Description” for load pull reference planes where the performance was measured. 4. 1GHz, Load-pull 58.3 57.9 57.3 56.7 56.1 55.7 18.6 18.1 17.6 17.1 16.6 75.6 74.6 72.6 70.6 69.6 68.6 67.6 • Max Power is 58.6dBm at Z = 1.22-0.82i = -0.3701-0.2662i • Max Gain is 18.9dB at Z = 1.44+1.39i = -0.2307+0.3853i • Max DEff is 75.8% at Z = 2.09+0.99i = -0.1358+0.2209i Zo = 3 3dB Compression Referenced to Peak Gain Zs(1fo) = 0.78-2.03i Zs(2fo) = 0.88-4.24i Zs(3fo) = 0.75-1.61i Zl(2fo) = 0.68+0.77i Zl(3fo) = 1.13+0.37i Power Gain DEFF 58.4 |
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