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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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QPD1025LEVB2 датащи(PDF) 7 Page - Qorvo, Inc |
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QPD1025LEVB2 датащи(HTML) 7 Page - Qorvo, Inc |
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7 / 27 page  QPD1025L 1800 W, 65 V, 0.96 – 1.215GHz, GaN RF Input-Matched Transistor Datasheet Rev. K, May 2020 │ Subject to changewithout notice - 7 of 26- www.qorvo.com Measured Load-Pull Smith Charts at 65V 1, 2, 3 Notes: 1. Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See ”Pin Configuration and Description” for load pull reference planes where the performance was measured. 4. 0.915GHz, Load-pull 59.8 59.8 59.6 59.2 58.8 58.4 57.6 20 19.5 19 18.5 18 78.3 77.3 74.3 71.3 69.3 68.3 65.3 • Max Power is 59.9dBm at Z = 1.8-0.25i = -0.2466-0.0649i • Max Gain is 20dB at Z = 1.97+2.44i = 0.0272+0.4776i • Max DEff is 78.4% at Z = 2.46+2.07i = 0.0392+0.3643i Zo = 3 3dB Compression Referenced to Peak Gain Zs(1fo) = 0.72-1.74i Zs(2fo) = 1.65-4.46i Zs(3fo) = 2.73-0.85i Zl(2fo) = 1.09+2.31i Zl(3fo) = 9.04-3.29i Power Gain DEFF |
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