QPD1025LEVB2 datasheet(2/27 Pages) QORVO

2 / 27 page

QPD1025L

1800 W, 65 V, 0.96

– 1.215GHz, GaN RF Input-Matched Transistor

Datasheet Rev. K, May 2020

│ Subject to changewithout notice

- 2 of 26-

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Absolute Maximum Ratings 1, 2, 3

Parameter

Rating

Units

Breakdown Voltage,BVDG

225

Gate Voltage Range, VG

-7 to +2

Drain Current, IDMAX

142

Gate Current Range, IG

See pg. 12

Power Dissipation, Pulsed,

PDISS 2

1209

RF Input Power, Pulsed, PIN 3

46.2

dBm

Mounting Temperature

(30 Seconds)

320

°C

Storage Temperature

−65 to +150

°C

Notes:

1. Operation of this device outside the parameter ranges given

above may cause permanent damage

2. Pulsed, 1000us PW, 20% DC, Package base at 85 °C

3. Pulsed, 100us PW, 10% DC, T = 25 °C

Recommended Operating Conditions 1, 2, 3, 4

Parameter

Min

Typ

Max Units

Operating Temp. Range

−40

+25

+85

°C

Drain Voltage Range, VD

–

+65

+70

Drain Bias Current, IDQ

1.5

Drain Current, ID 4

–

Gate Voltage, VG 3

–

−2.8

–

Power Dissipation (PD) 2,4

–

685

Power Dissipation (PD), CW 2

–

496

Notes:

1. Electrical performance is measured under conditions noted in

the electrical specifications table. Specifications are not

guaranteed over all recommended operating conditions

2. Package base at 85 °C

3. To be adjusted to desired IDQ

4. Pulsed, 1000us PW, 20% DC

Measured Load Pull Performance

– 65V Power Tuned 1, 2

Parameter

Typical Values

Units

Frequency, F

0.915

1.0

1.1

1.2

GHz

Output Power at 3dB compression, P3dB

59.9

59.7

59.8

dBm

Power Added Ef ficiency at 3dB compression, PAE3dB

63.2

62.8

65.7

61.9

Gain at 3dB compression, G3dB

17.9

17.5

17.3

17.2

Notes:

Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 750 mA (half device)

Pulsed, 100 us Pulse Width, 10% Duty Cycle.

Measured Load Pull Performance

– 65V Efficiency Tuned 1, 2

Parameter

Typical Values

Units

Frequency, F

0.915

1.0

1.1

1.2

GHz

Output Power at 3dB compression, P3dB

57.5

57.7

58.5

58.3

dBm

Power Added Ef ficiency at 3dB compression, PAE3dB

77.6

77.2

77.0

74.6

Gain at 3dB compression, G3dB

19.7

19.5

18.7

19.0

Notes:

Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 750 mA (half device)

Pulsed, 100 us Pulse Width, 10% Duty Cycle.

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