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FBSGAM02PR50 датащи(PDF) 29 Page - Efficient Power Conversion Corporation. |
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FBSGAM02PR50 датащи(HTML) 29 Page - Efficient Power Conversion Corporation. |
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29 / 33 page ![]() ©2020 EPC SPACE EPC.SPACE 29 FBS-GAM02-P-R50 Datasheet Radiation Characteristics Thermal Characteristics 30. Typical Low- or High-Side Catch Schottky Normalized Junction-to-Case Thermal Impedance 29. Typical Low- or High-Side Power eGAN® HEMT Normalized Junction-to-Case Thermal Impedance 1 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 Pulse Duration (s) 0.1 1 10 50% (Duty Cycle) 20% 10% 5% 2% 1% Single Pulse 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Duration (s) 0.1 1 10 50% (Duty Cycle) 20% 10% 5% 2% 1% Single Pulse The FBS-GAM02-P-R50 is a Radiation Hardness-Assured 50 V DC/10 A Dual Independent Low- and High-Side Power Driver Module. • EPC Space’s FBS-GAM02-P-R50 internally utilizes eGaN HEMT technology designed, fabricated and tested per Mil-Std-750 Method 1019 for total ionizing dose validation with total ionizing with an in-situ Gamma Bias for (i) VGS = 5V, (ii) VDS = VGS = 0 V and (iii) VDS = 80% BVDSS. • Under the above prescribed conditions EPC Space can guarantee parametric data limits as outlined within the FBS-GAM02-P-R50 datasheet with the additional pre/post radiation effects guarantee under a best practice commercial screened reliability level in an Epoxy Over-Mold non-hermetic package outline. When incorporating EPC Space radiation validated/assured HEMT materials, the FBS-GAM02-P-R50 is “guaranteed by designed” to survive High Dose Rate TID to levels of 100 kRad (Si) with Single Event Immunity to: Heavy Ion: Au, LET (Si)= 83.7, 2482 MeV, Range = 130 μm -- Up to 100 VDS Voltage Maximum. |
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