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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FBSGAM02PR50 датащи(PDF) 1 Page - Efficient Power Conversion Corporation. |
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FBSGAM02PR50 датащи(HTML) 1 Page - Efficient Power Conversion Corporation. |
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1 / 33 page  ©2020 EPC SPACE EPC.SPACE 1 FBS-GAM02-P-R50 FBS-GAM02-P-R50 50 VDC/10 A Radiation-Hardened Multifunction Power Module Features • 50 VDC/10 A Fully De-Rated (100 VDC/10 A Capable) • Integrated FDA10N30 eGaN® Output Power HEMTs • Four Possible Configurations: - Single Low-Side Gate Driver - Single High-Side Gate Driver - Independent Low- and High-Side Drivers - Half-Bridge Gate Drivers with Input Shoot-through Protection • Internal Shoot-Through Protection • Internal Power Good Circuitry • High Speed Switching Capability: 1.0+ MHz • Rugged Compact Molded SMT Package • “Pillar” I/O Pads • eGaN® HEMT Driver Switching Elements • Rad-Hard/Commercially Screened • Guaranteed Total Ionizing Dose: - Rated to 100 kRad • Single Event: - SEE immunity for LET of ~83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown • Neutron Fluence: - Maintains specification up to 1 x 1013 N/cm2 Application • Power Switches/Actuators • Single and Multi-Phase Motor Phase Drivers • Commercial Satellite EPS & Avionics • High Speed DC-DC Conversion Description EPC Space FBS-GAM02-P-R50 Series Radiation-Hardened Multifunction Power Module incorporates eGaN® switching power HEMTs with intended end use design within commercial satellite space environments. These modules include two output power switches, two high speed gate drive circuits (consisting entirely of eGaN® switching elements), two power Schottky diode clamp elements with shoot-through prevention logic (for the Half-Bridge connection) and a +5 VDC gate drive bias “power good” monitoring circuitry in an innovative, space- efficient, 18 pin SMT molded epoxy package. Data sheet parameters are “Post Radiation Effect” guaranteed utilizing EPC Space 100% Wafer by Wafer eGaN® element Radiation Hardness-Assurance validated materials. Circuit Design under US Patent #10,122,274 B2. Commerce Rated 9A515.x Device. FBS-GAM02-P-R50 Functional Block Diagram Shoot- through/ Disable Logic 1 K R VBIAS (4) (10) TBST (11) VDD (12) TOUT (8) TOS (13) BOUT (14) PGND BCON (15) TCON (18) BSTP (16) TSTP (17) CBYP CBOOT (Pin 9 is NO Connect) PG (5) SD (7) *SD (6) TIN (2) BIN (1) LGND (3) 1 K Level Shift H/S Gate Driver H/S Gate Driver Power Good Detection and Logic |
Аналогичный номер детали - FBSGAM02PR50 |
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Аналогичное описание - FBSGAM02PR50 |
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ссылки URL |
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