FDMS3602S datasheet(3/15 Pages) ONSEMI

номер детали	FDMS3602S

подробное описание детали	PowerTrench짰 Power Stage 25 V Asymmetric Dual N-Channel MOSFET

PDF	15 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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Electrical Characteristics T

J = 25°C unless otherwise noted.

Drain-Source Diode Characteristics

Notes:

1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined

by the user's board design.

2. Pulse Test: Pulse Width < 300

μs, Duty cycle < 2.0%.

3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

4. EAS of 50 mJ is based on starting TJ = 25

oC; N-ch: L = 1 mH, I

AS = 10 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 22 A.

5. EAS of 144 mJ is based on starting TJ = 25

oC; N-ch: L = 1 mH, I

AS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 36 A.

Symbol

Parameter

Test Conditions

Type

Min.

Typ.

Max. Units

VSD

Source-Drain Diode Forward Voltage

VGS = 0 V, IS = 15 A

(Note 2)

VGS = 0 V, IS = 26 A

(Note 2)

0.8

1.2

trr

Reverse Recovery Time

IF = 15 A, di/dt = 100 A/s

IF = 26 A, di/dt = 300 A/s

Qrr

Reverse Recovery Charge

6.6

a. 57 °C/W when mounted on

a 1 in2 pad of 2 oz copper

c. 125 °C/W when mounted on a

minimum pad of 2 oz copper

b. 50 °C/W when mounted on

a 1 in2 pad of 2 oz copper

d. 120 °C/W when mounted on a

minimum pad of 2 oz copper

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