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FDMS3602S датащи(PDF) 5 Page - ON Semiconductor

номер детали FDMS3602S
подробное описание детали  PowerTrench짰 Power Stage 25 V Asymmetric Dual N-Channel MOSFET
PDF  15 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMS3602S датащи(HTML) 5 Page - ON Semiconductor

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Figure 7.
0
5
10
15
20
0
2
4
6
8
10
ID = 15 A
VDD = 16 V
VDD = 13 V
Qg, GATE CHARGE (nC)
VDD = 10 V
Gate Charge Characteristics
Figure8.
0.1
1
10
10
100
1000
2000
25
f = 1 MHz
VGS = 0 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitancevs.Drain
to Source Voltage
Figure9.
0.01
0.1
1
10
100
1
10
20
TJ = 100 oC
TJ = 25 oC
TJ= 125 oC
tAV, TIME IN AVALANCHE (ms)
UnclampedInductive
Switching Capability
Figure10.
25
50
75
100
125
150
0
20
40
60
80
Limited by Package
VGS = 4.5 V
RθJC = 3.5 oC/W
VGS = 10 V
TC, CASE TEMPERATURE (
oC)
MaximumContinuousDrain
Current vs. Case Temperature
Figure 11. Forward Bias Safe
Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
DC
100 ms
10 ms
1 ms
1s
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
10s
100 μs
200
Figure12.
10-4
10-3
10-2
10-1
110
100
1000
0.5
1
10
100
1000
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
t, PULSE WIDTH (sec)
Single PulseMaximum
Power Dissipation
Typical Characteristics (Q1 N-Channel) T
J = 25°C unless otherwise noted.
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