FDMS3602S datasheet(2/15 Pages) ONSEMI

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Electrical Characteristics T

J = 25°C unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Symbol

Parameter

Test Conditions

Type

Min.

Typ.

Max. Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250 μA, VGS = 0 V

ID = 1 mA, VGS = 0 V

ΔBV

DSS

ΔT

Breakdown Voltage Temperature

Coefficient

ID = 250 μA, referenced to 25°C

ID = 10 mA, referenced to 25°C

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 20 V, VGS = 0 V

500

μA

IGSS

Gate to Source Leakage Current,

Forward

VGS = 20 V, VDS = 0 V

100

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250 μA

VGS = VDS, ID = 1 mA

1.8

1.9

ΔV

GS(th)

ΔT

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250 μA, referenced to 25°C

ID = 10 mA, referenced to 25°C

-6

-5

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 15 A

VGS = 4.5 V, ID = 14 A

VGS = 10 V, ID = 15 A, TJ = 125°C

4.4

6.2

5.9

5.6

8.1

8.7

VGS = 10 V, ID = 26 A

VGS = 4.5 V, ID = 22 A

VGS = 10 V, ID = 26 A, TJ = 125°C

1.7

2.6

2.5

2.2

3.4

3.9

gFS

Forward Transconductance

VDD = 5 V, ID = 15 A

VDD = 5 V, ID = 26 A

132

Ciss

Input Capacitance

VDS = 13 V, VGS = 0 V, f = 1 MHZ

1264

3097

1680

4120

Coss

Output Capacitance

340

847

450

1130

Crss

Reverse Transfer Capacitance

138

210

Gate Resistance

0.2

0.6

0.9

td(on)

Turn-On Delay Time

VDD = 13 V, ID = 15 A, RGEN = 6 Ω

VDD = 13 V, ID = 26 A, RGEN = 6 Ω

7.9

Rise Time

4.2

td(off)

Turn-Off Delay Time

Fall Time

1.8

3.2

Qg(TOT)

Total Gate Charge

VGS = 0V to 10 V

VDD = 13 V,

ID = 15 A

Qg(TOT)

Total Gate Charge

VGS = 0V to 4.5 V

Qgs

Gate to Source Charge

VDD = 13 V,

ID = 26 A

3.9

9.1

Qgd

Gate to Drain “Miller” Charge

2.4

5.3

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