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FDMS3602S датащи(PDF) 4 Page - ON Semiconductor

номер детали FDMS3602S
подробное описание детали  PowerTrench짰 Power Stage 25 V Asymmetric Dual N-Channel MOSFET
PDF  15 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMS3602S датащи(HTML) 4 Page - ON Semiconductor

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Typical Characteristics (Q1 N-Channel) T
J = 25°C unless otherwise noted.
Figure 1.
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 4 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure2.
0
102030
40
0
1
2
3
4
5
6
VGS = 3 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
VGS = 4 V
VGS = 4.5 V
VGS = 10 V
NormalizedOn-Resistance
vs. Drain Current and Gate Voltage
Figure3. Normalized On Resistance
-75 -50 -25
0
25
50
75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = 15 A
VGS = 10 V
TJ, JUNCTION TEMPERATURE (oC)
vs. Junction Temperature
Figure 4.
2
468
10
0
5
10
15
20
25
TJ = 125 oC
ID = 15 A
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
On-Resistance vs. Gate to
Source Voltage
Figure 5. Transfer Characteristics
12
3
4
0
10
20
30
40
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
40
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs. Source Current
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