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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FDMS3602S датащи(PDF) 1 Page - ON Semiconductor |
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FDMS3602S датащи(HTML) 1 Page - ON Semiconductor |
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1 / 15 page  Publication Order Number: FDMS3602S/D ©2011 Semiconductor Components Industries, LLC. August-2017, Rev. 2 FDMS3602S PowerTrench® Power Stage 25 V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency. Applications Computing Communications General Purpose Point of Load Notebook VCORE Server 4 3 2 1 5 6 7 8 Q1 Q2 G1 D1 D1 D1 G2 S2 S2 S2 D1 PHASE (S1/D2) S2 S2 S2 G2 D1 D1 D1 G1 Top Bottom PHASE Pin 1 Pin 1 MOSFET Maximum Ratings T A = 25°C unless otherwise noted. Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Q1 Q2 Units VDS Drain to Source Voltage 25 25 V VGS Gate to Source Voltage (Note 3) ±20 ±20 V ID Drain Current -Continuous (Package limited) TC = 25 °C 30 40 A -Continuous (Silicon limited) TC = 25 °C 65 135 -Continuous TA = 25 °C 151a 261b -Pulsed 40 100 EAS Single Pulse Avalanche Energy 504 1445 mJ PD Power Dissipation for Single Operation TA = 25°C 2.21a 2.51b W Power Dissipation for Single Operation TA = 25°C 1.01c 1.01d TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJA Thermal Resistance, Junction to Ambient 571a 501b °C/W RθJA Thermal Resistance, Junction to Ambient 1251c 1201d RθJC Thermal Resistance, Junction to Case 3.5 2 Device Marking Device Package Reel Size Tape Width Quantity 22OA N7OC FDMS3602S Power 56 13” 12 mm 3000 units |
Аналогичный номер детали - FDMS3602S |
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Аналогичное описание - FDMS3602S |
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