AS9C25512M2018L

AS9C25256M2018L

9/24/04, v.1.2

Alliance Semiconductor

P. 9 of 30

®

Package Thermal Resistance

Notes:

1. This parameter is sampled.

Notes:

1. Sampled, not 100% tested

3. L = 0V; H = 3V

Notes:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of

the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating for extended

periods may affect reliability.

Description

Conditions

Symbol

Typical

Units

Thermal Resistance (junction to

Test conditions follow standard test

methods and procedures for measuring

thermal impedance, per EIA/JESD51

BGA

TBD

°C/W

fpBGA

TBD

°C/W

TQFP

TBD

°C/W

Thermal Resistance (junction to

TBD

°C/W

Parameter

Symbol

Signals

BGA

(Max)

fpBGA

(Max)

TQFP

(Max)

Unit

Input Capacitance

Address and

Control pins

TBD

TBD

TBD

pF

Output Capacitance

TBD

TBD

TBD

pF

I/O Capacitance

I/O pins

TBD

TBD

TBD

pF

Rating

Parameter

Symbol

Min

Max

Unit

Core supply voltage relative to VSS

VDD

-0.5

3.6

V

I/O supply voltage relative to VSS

VDDQ

-0.3

3.9

V

Input and I/O voltage relative to VSS

-0.3

VDDQ + 0.3

V

Power Dissipation

-TBD

W

Short circuit output current

-TBD

mA

Storage Temperature

-65

150

°C

Storage Temperature under Bias

-55

125

°C

Junction Temperature

-TBD

°C