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AS9C25512M2018L датащи(PDF) 13 Page - Alliance Semiconductor Corporation

номер детали AS9C25512M2018L
подробное описание детали  2.5V 512/256K x 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface
PDF  30 Pages
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производитель  ALSC [Alliance Semiconductor Corporation]
домашняя страница  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS9C25512M2018L датащи(HTML) 13 Page - Alliance Semiconductor Corporation

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AS9C25512M2018L
AS9C25256M2018L
9/24/04, v.1.2
Alliance Semiconductor
P. 13 of 30
®
Timing waveform of read cycle[7]
Notes:
1. Both Flow-through and Pipeline Outputs indicated. A particular port is configured in Flow-through mode if PL/FT for that port is driven low,
and in Pipeline mode if PL/FT is driven high or left unconnected.
2. Parameters tCYC, tCH and tCL are different in Flow-through and Pipeline modes of operation (Refer AC Timing characteristics).
3. CE is an internal signal.CE = H implies 'Chip is Deselected' (CE0 = H or CE1 =L), CE = L implies 'Chip is Selected' (CE0 = L and CE1 =H).
Timings indicated for CE hold good for CE0 and CE1
4. BEn refers to any one of the 2 byte controls [n = 1 or 0] and DATA OUT refers to the corresponding Byte.
5. Counter set in “Load” mode (ADS = L,INC = X,RPT = H).
6. OE is an asynchronous input.
7. All timings are similar for both ports.
8. Read with Byte disabled. Data is not read out.Bus in High-Z condition.
CLK
CE[3]
ADDRESS[5]
OE[6]
BEn[4]
R/W
[Pipeline Mode]
tCEH
tCES
Q1
A1
A2
tCYC[2]
tCL
tCH
tAS
tAH
tBS
tBH
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
Q10
Read
(A1)
tCDP
tOHP
tHZCP
tLZCP
tHZOE
tLZOE
DATA OUT[1]
Q1
Q2
Q8
Read
(A2)
Dsel
Read[8]
(A4)
Dsel
Read
(A6)
Read
(A7)
Read
(A8)
Dsel
Read
(A10)
Dsel
Read
(A12)
Don’t care
Undefined
tOE
tWS
tWH
tLZOE
Q6
[Pipeline Mode]
Q1
Q10
tCDF
tOHF
tHZCF
tLZCF
tHZOE
tLZOE
Q1
Q2
Q8
tOE
tLZOE
Q6
OE[6]
[Flow-through Mode]
[Flow-through Mode]
DATA OUT[1]
Q12



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