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ASL4501SHN датащи(PDF) 35 Page - NXP Semiconductors

номер детали ASL4501SHN
подробное описание детали  Four-phase boost converter
PDF  43 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

ASL4501SHN датащи(HTML) 35 Page - NXP Semiconductors

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ASL4501SHN
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet
Rev. 2 — 10 January 2018
35 of 43
NXP Semiconductors
ASL4501SHN
Four-phase boost converter
12. Dynamic characteristics
[1]
All parameters are guaranteed over the virtual junction temperature range by design. Factory testing uses correlated test conditions to
cover the specified temperature and power supply voltage range.
Table 46.
Dynamic characteristics
Minimum and maximum values are specified for the following conditions: VBAT = 5.5 V to 40 V, VEN = 4.5 V to 5.5 V,
fosc = 130 MHz to 200 MHz, VCC = 4.5 V to 5.5 V and Tj = 40 C to +175 C[1]. All voltages are defined with respect to
ground. Positive currents flow into the IC. Typical values are given at VBAT = 12 V, VEN = 5 V, VCC = 5 V and Tj =25 C unless
otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fDCDC
DC-to-DC converter frequency
125
-
700
kHz
fDCDC(acc)
DC-to-DC converter frequency
accuracy
operating; trimmed
5-
+5
%
fosc
oscillator frequency
internal oscillator; untrimmed
130
-
250
MHz
target frequency for trimmed operation
-
180
-
MHz
tstartup
start-up time
EN = HIGH until SPI write access
-
-
150
s
EN = HIGH until SPI read access
-
-
2000
s
Serial peripheral interface timing; pins CSB, SCLK, SDI and SDO
fclk(int)/fSPI_CLK internal clock frequency to SPI
clock frequency ratio
-20 : 1
-
1
tcy(clk)
clock cycle time
250
-
-
ns
tSPILEAD
SPI enable lead time
50
-
-
ns
tSPILAG
SPI enable lag time
50
-
-
ns
tclk(H)
clock HIGH time
125
-
-
ns
tclk(L)
clock LOW time
125
-
-
ns
tsu(D)
data input set-up time
50
-
-
ns
th(D)
data input hold time
50
-
-
ns
tv(Q)
data output valid time
pin SDO; CL = 20 pF
-
-
130
ns
tWH(S)
chip select pulse width HIGH
250
-
-
ns
Gate driver
tch(g)
gate charge time
20 % to 80 %; VVGG = 7.5 V;
Cgate = 2000 pF
--30
ns
tdch(g)
gate discharge time
80 % to 20 %; VVGG = 7.5 V;
Cgate = 2000 pF
--14
ns
Regulated voltage
terr(startup)
start-up error time
of VGG; fosc = 180 MHz
-
2.5
-
ms
tdet(err)
error detection time
for VGG during operation;
fosc = 180 MHz
-31.5
-
s
tfltr(Vo)
output voltage filter time
for bit Vout1_ok and Vout2_ok;
fosc = 180 MHz
-31.5
-
s
tcal
calibration time
bit VGG_ok = HIGH
-
-
10
ms



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