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DS280DF810ABVT датащи(PDF) 8 Page - Texas Instruments

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номер детали DS280DF810ABVT
подробное описание детали  DS280DF810 28 Gbps Multi-Rate 8-Channel Retimer
PDF  51 Pages
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DS280DF810ABVT датащи(HTML) 8 Page - Texas Instruments

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DS280DF810
SNLS538A – SEPTEMBER 2016 – REVISED OCTOBER 2019
www.ti.com
Product Folder Links: DS280DF810
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
(1)
Steps must be taken to ensure the combined AC plus DC supply noise meets the specified VDD supply voltage limits.
(2)
Steps must be taken to ensure the operating junction temperature range and ambient temperature stay-in-lock range (TEMPLOCK+,
TEMPLOCK-) are met. Refer to Timing Requirements, Retimer Jitter Specifications for more details concerning TEMPLOCK+ and
TEMPLOCK-.
7.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted).
MIN
MAX
UNIT
VDD
Supply voltage, VDD to GND. DC plus AC power should not exceed these limits.
2.375
2.625
V
NVDD
Supply noise, DC to < 50 Hz, sinusoidal(1)
250
mVpp
NVDD
Supply noise, 50 Hz to 10 MHz, sinusoidal(1)
20
mVpp
NVDD
Supply noise, >10 MHz, sinusoidal(1)
10
mVpp
TrampVDD
VDD supply ramp time, from 0 V to 2.375 V
150
μs
TJ
Operating junction temperature
-40
110
ºC
TA
Operating ambient temperature
-40
85(2)
ºC
VIO2.5V
2.5 V I/O voltage (LVCMOS, CMOS and Analog)
2.375
2.625
V
VIO3.3V,INT_N
Open Drain LVCMOS I/O voltage (INT_N)
3.6
V
VIO3.3V
Open Drain LVCMOS I/O voltage (SDA, SDC)
2.375
3.6
V
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2)
No heat sink or airflow was assumed for these estimations. Depending on the application, a heat sink, faster airflow, or reduced ambient
temperature (<85 C) may be required in order to meet the maximum junction temperature specification per the Recommended
Operating Conditions.
7.4 Thermal Information
THERMAL METRIC(1)
CONDITIONS/ASSUMPTIONS(2)
DS280DF810
UNIT
FC/CSP (ABV)
135 PINS
RθJA
Junction-to-ambient thermal resistance
4-Layer JEDEC Board
26.4
°C/W
10-Layer 8-in x 6-in Board
9.3
20-Layer 8-in x 6-in Board
8.5
30-Layer 8-in x 6-in Board
8.2
RθJC(top)
Junction-to-case (top) thermal resistance
4-Layer JEDEC Board
1.6
°C/W
RθJB
Junction-to-board thermal resistance
4-Layer JEDEC Board
9.3
°C/W
ΨJT
Junction-to-top characterization parameter
4-Layer JEDEC Board
0.1
°C/W
10-Layer 8-in x 6-in Board
0.1
20-Layer 8-in x 6-in Board
0.1
30-Layer 8-in x 6-in Board
0.1
ΨJB
Junction-to-board characterization parameter
4-Layer JEDEC Board
9.3
°C/W
10-Layer 8-in x 6-in Board
5.0
20-Layer 8-in x 6-in Board
4.9
30-Layer 8-in x 6-in Board
4.6
7.5 Electrical Characteristics
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Rbaud
Input data rate
Full-rate
20.2
28.4
Gbps
Half-rate
10.1
14.2
Gbps
Quarter-rate
5.05
7.1
Gbps



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