PCF8811USLASH2DASLASH1 datasheet(42/73 Pages) PHILIPS

42 / 73 page

2004 May 17

Philips Semiconductors

Product speciﬁcation

× 128 pixels matrix LCD driver

PCF8811

16 DC CHARACTERISTICS

VDD1 = 1.7 V to 3.3 V; VSS =0V; VLCD = 3.0 V to 9.0 V; Tamb = −40 °C to +85 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDD1

general supply voltage

1.7

−

3.3

basic command set; when

using ROM look-up table

(see Section 13.10)

2.0

−

3.3

VDD2,

VDD3

supply voltage for the internal

voltage generator

1.8

−

3.3

VLCDIN

LCD supply voltage

LCD voltage externally

supplied (voltage generator

disabled)

−−

9.0

VLCDOUT

voltage multiplier output

voltage

LCD voltage internally

generated (voltage generator

enabled); note 1

−−

9.0

VLCD(tol)

tolerance of generated VLCD

without calibration

−300

−

+300

with calibration; note 2

−70

−

+70

IDD1

general supply current

notes 3 and 4

0.5

1.5

µA

notes 4 and 5

µA

IDD2, IDD3

supply current for the internal

voltage generator

notes 3 and 4

0.5

µA

notes 5 and 4

130

150

200

µA

IDD(tot)

total supply current

(VDD1 +VDD2 +VDD3)

notes 5 and 4

145

175

250

µA

Logic inputs; MF[2:0], VOS[4:0], DS0, EXT, PS[2:0], RES and OSC

VIL

LOW-level input voltage

VSS

−

0.2VDD1 V

VIH

HIGH-level input voltage

0.8VDD1 −

VDD1

leakage current

VI =VDD or VSS

−1

−

µA

Column and row outputs

Rcol

column output resistance

COL 0 to COL 127

VLCD =5V

−−

Ω

Rrow

row output resistance ROW 0

to ROW 79

VLCD =5V

−−

Ω

Vbias(col)

bias tolerance voltage COL 0

to COL 127

−100

+100

Vbias(row)

bias tolerance voltage ROW 0

to ROW 80

−100

+100

LCD supply voltage generator

TC0

VLCD temperature coefﬁcient 0

−

°C

TC1

VLCD temperature coefﬁcient 1

−−0.16 × 10−3

−

°C

TC2

VLCD temperature coefﬁcient 2

−−0.33 × 10−3

−

°C

TC3

VLCD temperature coefﬁcient 3

−−0.50 × 10−3

−

°C

TC4

VLCD temperature coefﬁcient 4

−−0.66 × 10−3

−

°C

TC5

VLCD temperature coefﬁcient 5

−−0.833 × 10−3 −

°C

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