Philips Semiconductors

PMGD780SN

Dual N-channel

µTrenchMOS™ standard level FET

Product data

Rev. 01 — 11 February 2004

2 of 12

9397 750 12758

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

3.

Ordering information

4.

Limiting values

[1]

Single device conducting.

Table 2:

Ordering information

Type number

Package

Name

Description

Version

PMGD780SN

SC-88

Plastic surface mounted package; 6 leads

SOT363

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

25

°C ≤ T

-

60

V

drain-gate voltage (DC)

25

°C ≤ T

-60

V

gate-source voltage (DC)

-

±20

V

drain current (DC)

[1]

-

0.49

A

[1]

-

0.31

A

peak drain current

[1]

-

0.99

A

total power dissipation

-

0.41

W

storage temperature

−55

+150

°C

junction temperature

−55

+150

°C

Source-drain diode

source (diode forward) current (DC)

[1]

-

0.34

A

[1]

-

0.69

A