Philips Semiconductors

PMGD780SN

Dual N-channel

µTrenchMOS™ standard level FET

Product data

Rev. 01 — 11 February 2004

4 of 12

9397 750 12758

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

5.

Thermal characteristics

5.1 Transient thermal impedance

Table 4:

Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction to solder point

Figure 4

-

-

300

K/W

Fig 4.

Transient thermal impedance from junction to solder point as a function of pulse duration.

03an28

1

10

102

103

10-4

10-3

10-2

10-1

1

10

tp (s)

Zth(j-sp)

(K/W)

single pulse

δ = 0.5

0.2

0.1

0.05

0.02

tp

tp

T

P

t

T

δ =