Philips Semiconductors

PMGD780SN

Dual N-channel

µTrenchMOS™ standard level FET

Product data

Rev. 01 — 11 February 2004

7 of 12

9397 750 12758

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

03aa34

0

0.6

1.2

1.8

2.4

-60

0

60

120

180

Tj (°C)

VGS(th)

(V)

typ

min

03an32

1E-8

1E-7

10-6

10-5

10-4

10-3

00.5

11.5

22.5

VGS (V)

ID

(A)

min

typ

03an92

1

10

102

10-1

1

10

102

VDS (V)

C

(pF)

Ciss

Coss

Crss