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PMGD780SN датащи(PDF) 1 Page - NXP Semiconductors |
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PMGD780SN датащи(HTML) 1 Page - NXP Semiconductors |
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1 / 12 page ![]() PMGD780SN Dual N-channel µTrenchMOS™ standard level FET Rev. 01 — 11 February 2004 Product data MBD128 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information s Surface mounted package s Footprint 40% smaller than SOT23 s Standard level threshold voltage s Fast switching s Low on-state resistance s Dual device. s Driver circuits s Switching in portable appliances. s VDS ≤ 60 V s ID ≤ 0.49 A s Ptot ≤ 0.41 W s RDSon ≤ 920 mΩ. Table 1: Pinning - SOT363 (SC-88), simplified outline and symbol Pin Description Simplified outline Symbol 1 source1 (s1) SOT363 (SC-88) 2 gate1 (g1) 3 drain2 (d2) 4 source2 (s2) 5 gate2 (g2) 6 drain1 (d1) MSA370 12 3 65 4 Top view s1 d1 g1 s2 MSD901 d2 g2 |
Аналогичный номер детали - PMGD780SN |
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Аналогичное описание - PMGD780SN |
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