PMGD780SN datasheet(5/12 Pages) PHILIPS

5 / 12 page

Philips Semiconductors

PMGD780SN

Dual N-channel

µTrenchMOS™ standard level FET

Product data

Rev. 01 — 11 February 2004

5 of 12

9397 750 12758

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 250 µA; VGS =0V

Tj =25 °C

--V

Tj = −55 °C

--V

VGS(th)

gate-source threshold voltage

ID = 0.25 mA; VDS =VGS; Figure 9

Tj =25 °C

12-

Tj = 150 °C

0.6

Tj = −55 °C

3.5

IDSS

drain-source leakage current

VDS =60V; VGS =0V

Tj =25 °C

0.05

µA

Tj = 150 °C

100

µA

IGSS

gate-source leakage current

VGS = ±20 V; VDS = 0 V

100

RDSon

drain-source on-state resistance

VGS = 10 V; ID = 0.3 A; Figure 7 and 8

Tj =25 °C

780

920

Ω

Tj = 150 °C

1445 1700 m

Ω

VGS = 4.5 V; ID = 0.075 A; Figure 7 and 8

1100 1400 m

Ω

Dynamic characteristics

Qg(tot)

total gate charge

ID = 1 A; VDD =30V; VGS =10V; Figure 13

1.05

Qgs

gate-source charge

0.2

Qgd

gate-drain (Miller) charge

0.22

Ciss

input capacitance

VGS =0V; VDS = 30 V; f = 1 MHz; Figure 11

-23

Coss

output capacitance

Crss

reverse transfer capacitance

3.5

td(on)

turn-on delay time

VDD =30V; RL =30 Ω; VGS =10V; RG =6 Ω

-2

-ns

rise time

-4

-ns

td(off)

turn-off delay time

fall time

2.2

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 0.3 A; VGS =0V; Figure 12

0.83

1.2

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