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SST49LF080A датащи(PDF) 28 Page - Silicon Storage Technology, Inc |
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SST49LF080A датащи(HTML) 28 Page - Silicon Storage Technology, Inc |
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28 / 49 page ![]() 28 Data Sheet 8 Mbit LPC Flash SST49LF080A ©2003 Silicon Storage Technology, Inc. S71235-00-000 4/03 DC Characteristics TABLE 12: DC OPERATING CHARACTERISTICS (ALL INTERFACES) Symbol Parameter Limits Test Conditions Min Max Units IDD1 1. IDD active while a Read or Write (Program or Erase) operation is in progress. Active VDD Current LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT at f=33 MHz (LPC mode) or 1/TRC min (PP Mode) All other inputs=VIL or VIH Read 12 mA All outputs = open, VDD=VDD Max Write 24 mA See Note2 2. For PP Mode: OE# = WE# = VIH; For LPC Mode: f = 1/TRC min, LFRAME# = VIH, CE# = VIL. ISB Standby VDD Current (LPC Interface) 100 µA LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT at f=33 MHz (LPC mode) or 1/TRC min (PP Mode) LFRAME#=0.9 VDD, f=33 MHz, CE#=0.9 VDD, VDD=VDD Max, All other inputs ≥ 0.9 VDD or ≤0.1 VDD IRY3 3. The device is in Ready mode when no activity is on the LPC bus. Ready Mode VDD Current (LPC Interface) 10 mA LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT at f=33 MHz (LPC mode) or 1/TRC min (PP Mode) LFRAME#=VIL, f=33 MHz, VDD=VDD Max All other inputs ≥ 0.9 VDD or ≤0.1 VDD II Input Current for Mode and ID[3:0] pins 200 µA VIN=GND to VDD, VDD=VDD Max ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 1 µA VOUT=GND to VDD, VDD=VDD Max VIHI INIT# Input High Voltage 1.1 VDD+0.5 V VDD=VDD Max VILI INIT# Input Low Voltage -0.5 0.4 V VDD=VDD Min VIL Input Low Voltage -0.5 0.3 VDD VVDD=VDD Min VIH Input High Voltage 0.5 VDD VDD+0.5 V VDD=VDD Max VOL Output Low Voltage 0.1 VDD VIOL=1500 µA, VDD=VDD Min VOH Output High Voltage 0.9 VDD VIOH=-500 µA, VDD=VDD Min T12.0 1235 TABLE 13: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Write Operation 100 µs T13.0 1235 TABLE 14: PIN CAPACITANCE (VDD=3.3V, Ta=25 °C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O=0V 12 pF CIN1 Input Capacitance VIN=0V 12 pF T14.0 1235 |
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